Performance of ultra‐wide band DCBLNA with suspended strip line radiator for human breast cancer diagnosis medical imaging application
2020; Institution of Engineering and Technology; Volume: 14; Issue: 8 Linguagem: Inglês
10.1049/iet-cds.2019.0207
ISSN1751-8598
AutoresGunjan Mittal Roy, Binod Kumar Kanaujia, Santanu Dwari, Sandeep Kumar, Hanjung Song,
Tópico(s)Microwave and Dielectric Measurement Techniques
ResumoIET Circuits, Devices & SystemsVolume 14, Issue 8 p. 1228-1234 Research ArticleFree Access Performance of ultra-wide band DCBLNA with suspended strip line radiator for human breast cancer diagnosis medical imaging application Gunjan Mittal Roy, Gunjan Mittal Roy orcid.org/0000-0002-8413-1678 Deparment of Electronics and Communication, Indian Institute of Technology (IIT), Dhanbad, Jharkhand, IndiaSearch for more papers by this authorBinod Kumar Kanaujia, Binod Kumar Kanaujia School of Computational and Integrative Sciences, Jawaharlal Nehru University, New Delhi, IndiaSearch for more papers by this authorSantanu Dwari, Santanu Dwari Deparment of Electronics and Communication, Indian Institute of Technology (IIT), Dhanbad, Jharkhand, IndiaSearch for more papers by this authorSandeep Kumar, Corresponding Author Sandeep Kumar fedrer.engg@gmail.com Department of Electronics and Communication, National Institute of Technology Karnataka, Surathkal, Mangalore, IndiaSearch for more papers by this authorHanjung Song, Hanjung Song Department of Nanoscience Engineering, Centre of Nano Manufacturing, Inje University, Gimhae, Republic of KoreaSearch for more papers by this author Gunjan Mittal Roy, Gunjan Mittal Roy orcid.org/0000-0002-8413-1678 Deparment of Electronics and Communication, Indian Institute of Technology (IIT), Dhanbad, Jharkhand, IndiaSearch for more papers by this authorBinod Kumar Kanaujia, Binod Kumar Kanaujia School of Computational and Integrative Sciences, Jawaharlal Nehru University, New Delhi, IndiaSearch for more papers by this authorSantanu Dwari, Santanu Dwari Deparment of Electronics and Communication, Indian Institute of Technology (IIT), Dhanbad, Jharkhand, IndiaSearch for more papers by this authorSandeep Kumar, Corresponding Author Sandeep Kumar fedrer.engg@gmail.com Department of Electronics and Communication, National Institute of Technology Karnataka, Surathkal, Mangalore, IndiaSearch for more papers by this authorHanjung Song, Hanjung Song Department of Nanoscience Engineering, Centre of Nano Manufacturing, Inje University, Gimhae, Republic of KoreaSearch for more papers by this author First published: 19 November 2020 https://doi.org/10.1049/iet-cds.2019.0207AboutSectionsPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Abstract This study presents the performance of differential cascode balun low noise amplifier (DCBLNA) with ultra-wideband (UWB) for human breast cancer diagnosis. The proposed DCBLNA design-I with bulky spiral inductors achieves insufficient bandwidth with large power consumption of 10.8 mW. To attain the proper UWB band of operation, suspended strip line (SSLIN) radiators have employed in the proposed design-I. The performance of SSLIN is evaluated in terms of line capacitance and characteristic impedance by optimising its width. It is observed that best 50 Ωn-II. DCBLNA design-II using SSLIN have achieving a desired band of operation ranging from 1.5 to 15.7 GHz and best NF of 0.5 dB. The gain and phase imperfections are simulated to characterise balun networks. The smallest gain imperfection achieved is 0.1 dB at 10 GHz while the simulated phase imperfection turns out to be sufficiently good with 2.35° at 8 GHz. The proposed DCBLNA design-II is implemented and fabricated using RFCMOS 45 nm Taiwan Semiconductor Manufacturing Company (TSMC) process under commercial conditions. The highest figure of merit comes out to be 3.2 that ensures good accuracy of medical imaging for breast cancer diagnosis. 1 Introduction Over the various researches done in recent past, the dominant focus is in medical field. In the cancer diagnosis of human breast, numerous methods have been deployed. Each one of them has shown its palpable consequences. The X-ray mammography, one of the most effective concepts, is being recommended for over 50 years [1]. However, with the passage of time it has been realised that the scheme has some flagrant results which finds it unworthy in today's era. The ionising radiations with breast compression lead to discomfort to the patient. Not only this but if the breast tissues are close to chest wall and near underarm, about 10–30% of tumours remain undetected [2]. Ultra-wide band (UWB) microwave radar technology is an attractive choice for human breast cancer diagnosis. Fig. 1 shows typical block diagram of the medical imaging for breast cancer diagnosis where data receiver can be improved by the proposed low noise amplifier (LNA) design. The basic idea involves the illumination of breast with transmitter antenna by UWB pulses. The scattered waves from breast tissues are gathered back at the receiving antenna in the form of images. The distinction of malignant tissues with normal tissues has been carried out on the basis of their permittivities and conductivities [3–9]. Finally, the time domain version is acquired by taking inverse Fourier transform. The technique is fantastic but demands extremely expensive equipment's [10]. The need of development of custom hardware has occurred to meet the challenges of improving quality of performance with cost and size reduction [11]. Thus, a dedicated integrated circuit based on complementary metal oxide semiconductor (CMOS) technology may be adapted to envisage the best quality feasible devices. In an integrated circuit (IC) module, transceiver is built to accomplish the purpose which includes so many components along with a LNA. Various concepts have been tailored in the designing of an LNA which gives almost the best performance, for instance multistage cascode LNA, inductive degeneration common source (IDCS), balun LNA and many more. A wideband balun LNA and MedRadio balun LNA were proposed by ZareFatina and ZareFatin [12], and Reddy et al. [13] have shown the limitations of poor noise performance and poor gain and phase imbalance. These issues have been taken care of by the proposed scheme. In [14], the power constrained simultaneous noise impedance matching (PCSNIM) technique is used for balun LNA to optimise power, noise and impedance matching. The IDCS topology used here turns out to be better than PCSNIM. Above it the input signal has been recovered differentially by a balun network. At the gate, this technique helps to attain high gain and least power consumption [15]. At the input stage to provide matching, the most popular choice is inductive peaking to offer good gain and noise matching. The dual peaking strategy is even superior in terms of offering high gain flatness along with the improved noise performance at high frequencies [16]. For interstage, matching transformer coupling is the traditional choice. This method not only brings to optimum impedance matching and noise figure (NF) but also enlarges the bandwidth [17]. However, the use of inductive coupling has its obvious limitations. Thus, the combinational matching network can be devised to achieve optimised matching to couple UWB band signal [18]. The rest of the paper is organised as follows. Section 2 describes the differential cascode balun low noise amplifier (DCBLNA) incurred by connecting the cascode cells in differential mode. Both cascode cells use IDCS technique, fundamentals of an LNA including its function, performance and device circuit are represented. Section 3 discusses about suspended strip line (SSLIN) and its superiority with mathematical relations, behavioural feature in terms of line capacitance and characteristic impedance. In Section 4, the proposed LNA design-II is explained, where amalgamation of SSLIN in LNA is given. Finally, Section 5 concludes the paper. Fig. 1Open in figure viewerPowerPoint Block diagram of typical medical imaging system for breast cancer diagnosis 2 LNA design-I with performance evaluation In the designing of a radio-frequency (RF) receiver, the vital part is a LNA after antenna and filter. Various topologies have been adopted so far in order to have maximum noise rejection with ideal band and superb gain performance. Here, a DCBLNA having a common source (CS) stage followed by another cascode cell is proposed. A major benefit of the topology is to minimise the noise factor. It also caters high gain, high isolation and wider bandwidth with better linearity. A basic cascode CS LNA cell is depicted in Fig. 2a. A CS stage is extensively used to amplify small signals especially in medical application over the wide band spectrum. In general, a cascode amplifier in CS mode comprises of two metal oxide semiconductor (MOS) transistors to minimise the Miller effect and elevate the gain where if the first stage drives the purely resistive load, the gain becomes proportional to . Once the frequency increases beyond a certain value, the gain decreases due to the effect of parasitic capacitance. This factor can be compensated by using gate inductive gain peaking technique and hence maximised gain could be achieved by keeping inductors value to be 1 nH. A cell of Fig. 2a employs IDCS technique to bias the device in order to elevate the stability of the operating conditions. The inductance value is taken to be 1 nH so that it resonates with the parasitic capacitance of M2 to nullify its parasitic effect. At the drain of M1, a series resonance circuit comprising of Ld and Rd having values of 5 nH and 60 Ω are used to achieve high output impedance which broadens the bandwidth of operation [19, 20]. Thus, the combination of Rd and Ld at the drain not only limits the Q factor of the inductor to balance the peak at resonance but also enhances the low frequency gain [21]. This cell is integrated in the proposed design-I of DCBLNA which is shown in Fig. 2b. The balun LNA in CS mode is primarily used to cancel the non-linearity caused by MOS transistors. It consists of active or passive feedback elements. The active feedback is furnished by MOS devices so that integration scalability is increased with high noise performance [11]. The proposed design-I of DCBLNA comprising of two stages of cascode amplifier is connected in inverted mode and to achieve differential mode balun LNA with an impedance matching stage in between. It gives differential output voltage that brings out to maximum noise cancellation. At the input, series shunt inductive peaking technique also called pi-type peaking is used to compensate the effect of reduced bandwidth which occurs due to the quality factor of series resonance circuit. The component values are properly chosen to achieve optimised results. Thus, at input matching stage, inductor , while and are kept at 4.14 nH. The symmetrical values of , , and help to get précised results. To achieve ripple free resonating peak in gain, R1 and R2 are chosen to be 5 kΩ. Also the 3 dB band is attained in the desired range [22]. Hence, the resonating peak is achieved at 8 GHz with the value of 16.4 dB. By cascading the stages directly, the operating point of the succeeding stages shifts which brings out to amplitude distortion. This issue has been taken care of by using matching network between the stages. The value of in T-network decouples the inter-stage capacitance effect while the capacitance offers the optimal signal transfer. The input inductances and come in shunt giving the effective inductance as . Both and IDCS inductance come in series while the MOS equivalent capacitance is considered as . The effective input impedance is given by the equation in [22] (1) Here is transconductance of MOSFET. The input impedance for both real and imaginary values is depicted in Fig. 3. The depicted impedance shows an (55 + j0) Ω matching constraints throughout the proposed design. The device width has been put into optimisation mode to achieve desirable results which brings out both real and imaginary impedances in unobjectionable range. Fig. 4 reveals the S-parameter characteristic of DCBLNA where the band achieved is in the range of 1–10.5 GHz with double dip at approximately −35 dB. It is due to the aspect ratio of MOS transistors (M1, M2) and (M3, M4) are kept identical. The inductance values are taken small to nearly 5 nH to elevate the gain and compensate the effect of frequency gain roll-off by the capacitors. Thus, the circuit has been optimised to obtain the desired maximum gain. The shunt series peaking technique involved at the drain of transistors helps to achieve high gain. It is worth noting here that without the inter-stage inductance L7 the gain could be dropped due to inter-stage and parasitic capacitances. Thus, it comes out to be ∼20.48 dB at 6.8 GHz. The noise performance of the LNA is based on DC input power, output power and quality factor of the coil. It is kept low by introducing R–L series peaking. The NF of the device is determined by the below mentioned equation [18]: (2) (3) (4) where is power consumption and is output power, while and are technological parameters. is the saturation velocity, is the velocity saturation field strength, is the operating frequency, is the correlation coefficient of gate noise and drain noise and is the coefficient of gate noise. The variation of the gain between the proposed DCBLNA and the basic cell is shown in Fig. 5. The highest peak gain of 20.5 dB is achieved at resonant frequency of 7 GHz. It is clear at the point of observation that 5 dB enhancement in gain is found with the proposed DCBLNA. Fig. 6 yields the comparison graph of NF. It can be concluded that theoretically it turns out to be ∼2 dB for the band range of 6–12 GHz, whereas simulation results reveal its maximum value to be 3 dB with ±2 dB variations for the same band range. Figs. 4–6 show both simulation and measurement performances in spite of the fact that the chip is not shown. The obvious reason is that here we have emphasised on final proposed chip. Fig. 2Open in figure viewerPowerPoint LNA design architecture (a) Basic cascode cell, (b) Proposed schematic of DCBLNA Fig. 3Open in figure viewerPowerPoint Input impedance variation with frequency Fig. 4Open in figure viewerPowerPoint S-parameter variation with frequency Fig. 5Open in figure viewerPowerPoint Forward gain variation with frequency Fig. 6Open in figure viewerPowerPoint NF variation with frequency 3 SSLIN radiator analysis and characterisation The SSLIN radiators have been adopted as a replacement to the inductors in order to achieve the desired band which will be discussed in the next section so this section includes the constructional and characteristic details of SSLIN. They can be used as an alternative to the other strip lines such as microstrip, quarter wave and so on. An SSLIN is the transmission media which has been extensively used as primary medium for upper microwave frequency band. They have symmetrical shielding thus useful for integrated circuits with waveguide components. They find numerous applications in the field of RF communication which includes directional couplers, mixers, frequency multipliers, power dividers and transistor amplifiers. Recently, they have scored their position in CMOS LNAs. Earlier micro-strip line (MSL) were also used in CMOS LNA for coupling to get band extension. However, the studies show numerous advantages in SSLIN over MSL where the biggest one is the enhanced accuracies in the results. It is achieved on the account of presence of air gap between ground plane and substrate resulting into reduction of dispersion effect on propagation constant. Thus, at even very high frequencies, the results are quiet precise. Also, high load impedance can be acquired by using SSLIN. Instead, it offers the problem of miniaturisation and critical housing technology. Fig. 7a shows schematic view and Fig. 7b shows 3D view of SSLIN which has been implemented using RF Momentum on Keysight technologies ADS designing and simulation software. The schematic shows that it has a dielectric substrate of height h and relative permittivity while it has two conducting plates above and below which acts as conducting track and ground, respectively, at the heights of and . The suspended metal contact of width w is connected over the substrate. In 3D view, the slotted top conducting layer is devised to have optimal matching and performance, whereas this slotting is not visible in 2D schematic. The characteristics of the SSLIN mainly include characteristic impedance, inductance, capacitance and damping factor of the line. These parameters in turn depend on the line spacing, dielectric constant of the substrate and the air above the copper trace. The characteristic impedance can be calculated from the below-mentioned equations from (5)–(14) [23]: (5) For suspended MSL radiator, u is the aspect ratio which can defined as (6) where w is the width of suspended line, h is the height of dielectric substrate and is height between the middle dielectric substrate to lower conducting ground plane while is the height between upper conducting plate and middle substrate. The function of is given as (7) The effective dielectric constant is obtained from the equation (8) Here is the dielectric constant of the substrate (9) (10) where and are the heights depending on h and (11) where , and . Fig. 7Open in figure viewerPowerPoint Proposed SSLIN design with its (a) Schematic view, (b) 3D view and are lower and upper cut off frequencies. (12) represents the operating domains for different values of frequencies and capacitances. Thus from the above-mentioned equations, the conclusion is that the effective dielectric constant depends upon the distance or height between the conducting planes and the capacitance and which is inversely proportional to the gap between the conducting plates hence as the height increases the capacitance drops. Fig. 8 shows the calculated and simulated line capacitance with respect to spacing between the conductors while thickness of the track is varied. When is determined, Z can be computed as where is the impedance of identical air filled line, it is defined as (13) where and (14) The characteristic impedance of identical air filled line has been calculated by keeping the thickness of the track variable whereas the height is kept as 0.79 mm, and . The graph shown in Fig. 9 demonstrates that the theoretical and the simulated results fairly corroborate with each other up to ∼5 GHz beyond which the two results separate slightly. Fig. 8Open in figure viewerPowerPoint Line capacitance variation with spacing 'h' Fig. 9Open in figure viewerPowerPoint Characteristic impedance versus frequency In SSLIN, the dispersion phenomenon becomes dominating at higher frequencies due to which the simulated results vary slightly at higher frequencies. Also, it varies with respect to change in relative permittivity and the height of dielectric material. Here, with the increment of width of the track the characteristic impedance is found to be increasing. However, along with these parametric results, the band behaviour of SSLIN has been measured. It is considered that when only one SSLIN is used individually, the band is narrower with one dip at 8.8 GHz. The behaviour has been studied by cascading two SSLINs with the effect of change of width; the result is enhanced within the band range of 1.5–15.7 GHz with two resonating dips at 3.9 and 10.5 GHz, respectively. The measurement is done over RF trainer which turns out to resemble with simulation and which can be seen in (Fig. 10). The summarised analyses for characteristic impedance by varying are shown in Tables 1 and 2, respectively. Table 1. Summarised analysis of characteristic impedance SSLIN track width (W) in mm Designed , Ω Simulated , Ω Designed 0.15 67.32 68.04 5.949 0.25 74.77 75.04 6.068 0.35 85.55 86.03 6.163 Table 2. Summarised analysis of characteristic impedance SSLIN track width (W) in mm Designed Simulated 0.79 9.335 9.2 0.508 10.99 10.81 0.254 14.9 15.05 Fig. 10Open in figure viewerPowerPoint Return loss versus frequency 4 LNA design-II with performance evaluation This section includes the finally proposed design-II with the behavioural and constructional details of previously mentioned work of the paper. The paper work is sub-divided into three steps where in the first step, DCBLNA design-I having matching networks at input and coupling stages has been presented. It resulted into a band of operation ranging from 1 to 10.5 GHz only that is insufficient for the application of human breast cancer diagnostic system. The acquired peak gain of 20.5 dB, NF nearly of 2 dB and DC power consumption of 10.8 mW have been achieved. While the second task had decided to deduce methodology which can be used to enhance the band performance. The solution to the problem is the use of SSLIN in LNAs replacing the bulky inductors in the fabricated chip. So, the study of SSLIN has been analysed in second stage. Finally, the third step discussed in this section includes a refresh LNA design-II with SSLIN radiators (Table 3). The proposed LNA design-II has capabilities to provide wide bandwidth, high gain and better linearity. A medical imaging in breast cancer diagnosis requires proper UWB bandwidth for data acquisition and delivering to the designated station to view. In the designing of an LNA, a number of researches show that in many devices and circuits, the use of inductors is unavoidable due to their evident and obvious desired functioning such as the widely used inductive peaking technique to elevate gain and enhance bandwidth, while maintaining the stability in performance. The use of suspended substrate MSL has gained immense popularity as to be widely used in planar transmission lines for microwave and RF devices and circuits. The reason of popularity is its obvious beneficial nature providing ease of integration, fabrication and above all best heat sinking feature. Table 3. Performance comparison of LNA with other reported ones Design Parameters [22] [25] [26] Present work technology (nm) 180 180 110 45 B.W, 3 dB (GHz) 3.2–10.64 3.48–8.76 3–10 1.5–15.7 NF (dB) 2.5–5.7 <6.26 2.4–2.9 <2 S21 (dB) 17 12.73 17.5–18.7 20.5 S11 (dB) <−10 <−10 <−10 <−10 PDC (mW) 16.5 16.5 8.3 10.8 (without SSLIN) 1.4(with SSLIN) FOM – 1.86 11.5 3.2 chip area (mm2) 0.26×0.29 — 2.3×2.8 0.125×0.212 The physical size and insertion loss also reduce by using SSLIN. Thus, SSLIN is incorporated in the proposed LNA in place of inductors shown in Fig. 11 while Fig. 12 depicts a microchip photograph of the proposed DCBLNA based on SSLIN. The area of the fabricated chip are calculated as 0.212 × 0.125 mm2 while it is fabricated on metal–insulator–metal layers using RF 45 nm TSMC CMOS process including various RF and DC coupling testing pads. For fabricating the LNA, RF MOSFET as Berkeley short channel IGFET model is exploited. The performance is investigated in terms of S-parameters with the help of Keysight's vector network analyser. The motivational factor behind the use of SSLIN is the extension of the band to bring it in the range of application of human breast cancer diagnosis system. The enhancement of band is distinctly mentioned in Fig. 13 where the final bandwidth range is from 1.5 to 15.7 GHz while no change is observed in the gain. The SSLIN is used with three different sizes (0.15, 0.25 and 0.35 mm) to ensure similar band enhancement. The comparison of respected previous methodologies is carried out in terms of figure of merit (FoM). The FOM1 and FOM2 for gain and phase imperfection are given by the below-mentioned equations [24]: (15) (16) The mathematical expression for absolute gain is expressed as (17) where V and P are voltage gain and power gain in dB, respectively. Based on these parameters, the gain and phase imperfections are determined. They have to be small enough to describe the performance status of a fine LNA. Fig. 11Open in figure viewerPowerPoint Proposed LNA design-II replacing L by SSLIN Fig. 12Open in figure viewerPowerPoint Chip photograph of DCBLNA design-II Fig. 13Open in figure viewerPowerPoint S-parameter variation with frequency for LNA design-II Fig. 14 shows simulated variation of NF by varying SSLIN width from 0.15 to 0.35 mm. The best width has to be chosen as 0.25 mm for the proposed design after optimisation. At SSLIN width of 0.25 mm, lowest NF is 0.5 dB within range from 4 to 15 GHz. While Figs. 15 and 16 have shown gain and phase imperfection characteristics with respect to desired band of operation. The gain imperfection ranges from 0.25 to 1.8 dB while it is observed to be smallest at 10 GHz with the magnitude of 0.1 dB. The phase imperfection turns out to be sufficiently good with slight deviation of only 2.42–2.5°. It is found to be least of 2.35° at 8 GHz. By calculating the exact gain and phase imperfections, the proposed design achieved best FoMs of 3.2. Fig. 14Open in figure viewerPowerPoint NF variation with frequency for LNA design-II Fig. 15Open in figure viewerPowerPoint Gain imperfection versus frequency Fig. 16Open in figure viewerPowerPoint Phase imperfection versus frequency 5 Conclusion This paper demonstrated a DCBLNA in UWB range for human breast cancer diagnosis system. The incorporated SSLIN radiators instead of bulky inductors uplift the band response ranging from 1.5 to 15.7 GHz. The proposed DCBLNA architecture achieves highest gain of 20.5 dB, NF of <2 dB, minimum power consumption of 1.4 mW and highest FoM of 3.2. 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