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Doping-Induced Stacking Transition in Trilayer Graphene: Implications for Layer Stacking Manipulation

2020; American Chemical Society; Volume: 3; Issue: 12 Linguagem: Inglês

10.1021/acsanm.0c02400

2574-0970

Nikos Delikoukos, Dimitrios Tasis, Antonios Michail, John Parthenios, Emmanuel Ν. Koukaras, Konstantinos Papagelis,

2D Materials and Applications

We demonstrate a crystallographic configurational transformation from rhombohedral (ABC) to Bernal (ABA) stacking by exposing large area exfoliated trilayer graphene (3LG) to nitric acid vapors and effectively introduce an approach to induce motion between adjacent stackings. We employ Raman spectroscopy, which is sensitive to interlayer stacking distortion of 3LG, to qualitatively study the crystallographic transformation. We have found that after 2 h of nitric acid exposure (doping), the ABC domains transformed completely to ABA ones, while area and linear maps across selected regions of the sample reveal a micrometer-scale shift of the upper layer of 3LG relative to the lower ones. The latter provides evidence that the unfolding of wrinkles plays an important role in stacking transformation.