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Temperature dependence of optical properties of InAs/InP quantum rod-nanowires grown on Si substrate

2020; Elsevier BV; Volume: 231; Linguagem: Inglês

10.1016/j.jlumin.2020.117814

1872-7883

Mohamed Helmi Hadj Alouane, Olfa Nasr, H. Khmissi, Bouraoui Ilahi, G. Patriarche, Mohamad M. Ahmad, M. Gendry, C. Bru‐Chevallier, Nicolas Chauvin,

Semiconductor Quantum Structures and Devices

The emergence of semiconductor nanowires (NWs) as a new class of functional materials has generated a great interest in the scientific community in the fields of electronics, photonics and energy. In this work, we report on the optical properties of telecom-band emitting InAs/InP quantum rod-nanowires (QR-NWs) grown on silicon substrates by gold catalyst assisted molecular beam epitaxy (MBE). The energies of A and B band transitions in wurtzite InAs QRs are numerically evaluated by finite element method (FEM) as a function of the QR geometry and strain and compared with the experimental results obtained from photoluminescence (PL). Temperature-dependent optical properties of the QR-NWs are studied revealing that the integrated PL intensity keeps up to 30% of its value at 14 K which testify a high stability of the PL intensity. Furthermore, the investigated nanostructure shows a room temperature emission wavelength at 1.55 μm. These results demonstrate a great promise for telecom-band III-V nanoemitters monolithically grown on silicon.