Impact of Post-Metal Annealing With Deuterium or Nitrogen for Curing a Gate Dielectric Using Joule Heat Driven by Punch-Through Current
2020; Institute of Electrical and Electronics Engineers; Volume: 42; Issue: 2 Linguagem: Inglês
10.1109/led.2020.3043384
ISSN1558-0563
AutoresJun-Young Park, Tae Jin Yoo, Ji‐Man Yu, Byoung Hun Lee, Yang‐Kyu Choi,
Tópico(s)Ferroelectric and Negative Capacitance Devices
ResumoTransistor-level annealing via the self-heating effect is useful for curing degraded gate dielectric in terms of quality and reliability. It has been speculated that the curing characteristics depend on the device state after post-metal annealing, but no conclusive evidence has been found so far. This work experimentally confirms the relationship between passivation gas species and curing characteristics during transistor-level annealing. It was confirmed that the existence of deuterium in a device was strongly associated with curing behavior.
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