Portal de Periódicos da CAPES

The effect of post-metal annealing on the electrical performance and stability of two-step-annealed solution-processed In2O3 thin film transistors

2021; Elsevier BV; Volume: 23; Linguagem: Inglês

10.1016/j.cap.2020.12.014

1878-1675

Liang Zhang,

Silicon and Solar Cell Technologies

In this work, solution-processed indium oxide (In2O3) thin film transistors (TFTs) were fabricated by a two-step annealing method. The influence of post-metal annealing (PMA) temperatures on the electrical performance and stability is studied. With the increase of PMA temperatures, the on-state current and off-state current (Ion/Ioff) ratio is improved and the sub-threshold swing (SS) decreased. Moreover, the stability of In2O3 TFTs is also improved. In all, In2O3 TFT with post-metal annealing temperature of 350°С exhibits the best performance (a threshold voltage of 4.75 V, a mobility of 13.8 cm2/V, an Ion/Ioff ratio of 1.8 × 106, and a SS of 0.76 V/decade). Meanwhile, the stability under temperature stress (TBS) and positive bias stress (PBS) also show a good improvement. It shows that the PMA treatment can effectively suppress the interface trap and bulk trap and result in an obviously improvement of the In2O3 TFTs performance.