Artigo Acesso aberto Revisado por pares

Kondo effect in quantum dots

2004; IOP Publishing; Volume: 16; Issue: 16 Linguagem: Inglês

10.1088/0953-8984/16/16/r01

ISSN

1361-648X

Autores

M. Pustilnik, L. I. Glazman,

Tópico(s)

Advancements in Semiconductor Devices and Circuit Design

Resumo

We review mechanisms of low-temperature electronic transport through a quantum dot weakly coupled to two conducting leads. Transport in this case is dominated by electron–electron interaction. At temperatures moderately lower than the charging energy of the dot, the linear conductance is suppressed by the Coulomb blockade. Upon further lowering of the temperature, however, the conductance may start to increase again due to the Kondo effect. We concentrate on lateral quantum dot systems and discuss the conductance in a broad temperature range, which includes the Kondo regime.

Referência(s)