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Stackable InGaAs-on-Insulator HEMTs for Monolithic 3-D Integration

2021; Institute of Electrical and Electronics Engineers; Volume: 68; Issue: 5 Linguagem: Inglês

10.1109/ted.2021.3064527

1557-9646

Jaeyong Jeong, Seong Kwang Kim, Jongmin Kim, Dae‐Myeong Geum, Juyeong Park, Jae‐Hyung Jang, Sanghyeon Kim,

Radio Frequency Integrated Circuit Design

In this article, we have demonstrated 125-nm-gate InGaAs-on-insulator (InGaAs-OI) high-electron-mobility transistors (HEMTs) on Si substrates via wafer bonding. The highlights of this device were the i-In 0.53 Ga 0.47 As/i-InAs/i-In 0.53 Ga 0.47 As quantum-well channel for high RF performance by improving electron transport properties and the low processing temperature of 250 °C or less for monolithic 3-D integration. As a result, we obtained a current gain cutoff frequency ( f T ) of 227 GHz and a maximum oscillation frequency ( f MAX ) of 187 GHz. These results are the highest ever reported in monolithic 3-D RF transistors above L G = 100 nm. In addition, through the small-signal modeling, we have found that the impact of the back-gate (BG) on RF performances of top devices is a critical issue in M3D RF systems.