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Design of the Class-E Power Amplifier Considering the Temperature Effect of the Transistor On-Resistance for Sensor Applications

2021; Institute of Electrical and Electronics Engineers; Volume: 68; Issue: 5 Linguagem: Inglês

10.1109/tcsii.2021.3066963

1558-3791

Chang Liu, C.‐J. Richard Shi,

Wireless Power Transfer Systems

This brief presents the analysis and compensation technique for the class-E power amplifier (PA) considering the temperature effect of the non-zero transistor on-resistance for sensor network applications. It is shown theoretically and by simulation that the output power level and efficiency decrease with the increase of the transistor on-resistance. The transistor biasing condition for achieving near-zero temperature dependence is derived. With this, a dynamic biasing technique is proposed to stabilize the output power of the PA over a wide temperature range. A prototype class-E PA was designed and fabricated in a 0.18- μm CMOS process. Operating at 477 MHz, the PA has 4 output stages and the measured maximum output variation is about ±0.3 dB from -40 °C to 85 °C. This measurement has a good agreement with the theoretical analysis and simulation.