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Effect of hafnium addition on structure, wear resistance and high temperature oxidation of MOSx thin films

2021; Elsevier BV; Volume: 415; Linguagem: Inglês

10.1016/j.surfcoat.2021.127097

1879-3347

P.C. Silva Neto, D.A. Ramirez, A.R. Terto, Jonh Yago Erikson Santos, Júlio César Valeriano dos Santos, Fabiana Magalhães Teixeira Mendes, F.L. Serafini, María Cristina Moré Farias, E.K. Tentardini,

Semiconductor materials and devices

Pure MoSx and MoSx + Hf thin films were deposited by magnetron sputtering and characterized by RBS, GAXRD, XPS, high temperature oxidation tests and tribological tests. Hf content was set at 12 at.% by RBS and GAXRD analyses revealed a complete amorphization caused by Hf incorporation. XPS analyses indicated that hafnium is inserted in MoSx in the form of HfSx, moreover, such compound was responsible for inhibiting the formation of MoS. These factors are closely correlated with improvements obtained in oxidation resistance, friction coefficient, wear rate and lifespan of MoSx thin films.