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Analysis of the 1st and 3rd Quadrant Transients of Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

2021; Institute of Electrical and Electronics Engineers; Volume: 2; Linguagem: Inglês

10.1109/ojpel.2021.3072503

2644-1314

Juefei Yang, Saeed Jahdi, Bernard H. Stark, Olayiwola Alatise, Jose Ortiz Gonzalez, Phil Mellor,

Advancements in Semiconductor Devices and Circuit Design

In this paper, performance at 1 st and 3 rd quadrant operation of Silicon and Silicon Carbide (SiC) symmetrical and asymmetrical double-trench, superjunction and planar power MOSFETs is analysed through a wide range of experimental measurements using compact modeling. The devices are evaluated on a high voltage clamped inductive switching test rig and switched at a range of switching rates at elevated junction temperatures. It is shown, experimentally, that in the 1 st quadrant, CoolSiC (SiC asymmetrical double-trench) MOSFET and SiC symmetrical double-trench MOSFET demonstrate more stable temperature coefficients. Silicon Superjunction MOSFETs exhibits the lowest turn-off switching rates due to the large input capacitance. The evaluated SiC Planar MOSFET also performs sub-optimally at turn-on switching due to its higher input capacitance and shows more temperature sensitivity due to its lower threshold voltage. In the 3 rd quadrant, the relatively larger reverse recovery charge of Silicon Superjunction MOSFET negatively impacts the turn-OFF transients compared with the SiC MOSFETs. It is also seen that among the SiC MOSFETs, the two double-trench MOSFET structures outperform the selected SiC planar MOSFET in terms of reverse recovery.