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Analog characteristics of n-type vertically stacked nanowires

2021; Elsevier BV; Volume: 185; Linguagem: Inglês

10.1016/j.sse.2021.108127

1879-2405

Genaro Mariniello, Cesar augusto Belchior de Carvalho, Bruna Cardoso Paz, Sylvain Barraud, M. Vinet, Olivier Faynot, Marcelo Antonio Pavanello,

Nanowire Synthesis and Applications

This paper presents the fundamental analog figures of merit, such as the transconductance, output conductance, transconductance over drain current ratio, intrinsic voltage gain and harmonic distortion (or non-linearity), of n-type vertically stacked nanowires with variable fin width and channel length. To have a physical insight on the results, the basic electrical parameters such as threshold voltage, subthreshold slope and low field electron mobility of the analyzed transistors were also studied. The studied analog parameters are presented in function of the transconductance over drain current, to allow for the comparison at the same inversion level.