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Compact E-Band I/Q Receiver in SiGe BiCMOS for 5G Backhauling Applications

2021; Institute of Electrical and Electronics Engineers; Volume: 68; Issue: 9 Linguagem: Inglês

10.1109/tcsii.2021.3096817

1558-3791

Giandomenico Amendola, Luigi Boccia, Francesco Centurelli, P. Chevalier, Alessandro Fonte, Carmine Mustacchio, Andrea Pallotta, Pasquale Tommasino, Antonio Traversa, Alessandro Trifiletti,

Millimeter-Wave Propagation and Modeling

The implementation of backhauling links poses several challenges to the designers which are requested to limit the hardware costs in the framework of complex millimeter wave radio systems. This work presents a monolithically integrated E-band I/Q receiver covering the whole bandwidth from 71 to 86 GHz. The chip was implemented in a 55 nm SiGe BiCMOS technology which allows reaching a high level of integration. The receiver is based on a Low Noise Amplifier (LNA) stage and a Variable-Gain Amplifier (VGA) which provide a -11 dBm IP1dB. A double balanced mixer provides I/Q baseband outputs through a reduced-size differential phase shifter which allows to contain the chip size to 1.8 mm 2 .