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Surface and interface structures of epitaxial Sb2Se3 on mica

2021; Elsevier BV; Volume: 567; Linguagem: Inglês

10.1016/j.apsusc.2021.150859

1873-5584

Lukáš Valdman, Xixing Wen, Zonghuan Lu, Xuegang Chen, Fanny Hiebel, Lihua Zhang, Kim Kisslinger, Ye Tao, Morris Washington, Toh‐Ming Lu, G.-C. Wang,

Advanced Semiconductor Detectors and Materials

Sb2Se3 thin film is an emerging photon absorber used in solar cells. We report the study of surface and interface structures of Sb2Se3(1 2 0) film grown on mica substrate by a high-rate vapor transport method. The interface epitaxial relationship between Sb2Se3 and mica examined by the cross- sectional TEM images and diffraction patterns along the [0 0 1] and [10]2¯ directions of Sb2Se3 reveal a rectangular structure with lengths of 4.03 ± 0.1 Å and 5.29 ± 0.1 Å, consistent with the [1 2 0] out-of-plane direction of Sb2Se3 bulk lattice parameters. In contrast, the two-dimensional reciprocal space map (2D map) constructed from azimuthal reflection high-energy electron diffraction (ARHEED) patterns from the surface exhibits a decorated hexagonal structure. This surface structure emerges from six epitaxial orientation domains/rods and each domain has a rectangular unit mesh of 3.94 ± 0.09 Å and 26.95 ± 1.16 Å along the [0 0 1] and [10]2¯ directions. The 26.95 Å is consistent with the unit mesh of the outermost layer of the Sb2Se3(1 2 0) domains/rods. Our 2D map reveals surface information that are not easily observed by other diffraction techniques.