Effective neutron detection using vertical-type BGaN diodes
2021; American Institute of Physics; Volume: 130; Issue: 12 Linguagem: Inglês
10.1063/5.0051053
ISSN1520-8850
AutoresTakayuki Nakano, Ken Mochizuki, Takuya Arikawa, Hisaya Nakagawa, Shigeyoshi Usami, Yoshio Honda, Hiroshi Amano, A. Vogt, Sebastian Schütt, M. Fiederle, Kazunobu Kojima, Shigefusa F. Chichibu, Y. Inoue, Toru Aoki,
Tópico(s)Photocathodes and Microchannel Plates
ResumoIn this study, vertical-type thick BGaN PIN diodes were successfully fabricated to improve the neutron capture rate of BGaN diodes by improving the BGaN epitaxial growth technique. In this technique, 5-μm-thick epitaxial growth was achieved using trimethylboron as a B metal-organic source, which suppressed the gas-phase reaction. The α-particle energy spectrum, the neutron pulse signal, and the residual energy of particles emitted from a neutron capture reaction were measured using the fabricated BGaN diodes by performing radiation detection measurements. The detected signal position in the neutron detection signal spectrum was similar to that of 2.3 MeV α-particles. These results indicate that vertical-type BGaN diodes can be used as effective neutron detectors.
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