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Low Power MoS 2 /Nb 2 O 5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity (Adv. Funct. Mater. 40/2021)

2021; Wiley; Volume: 31; Issue: 40 Linguagem: Inglês

10.1002/adfm.202170294

1616-3028

Jae Hyeon Nam, Se‐Young Oh, Hye Yeon Jang, Ojun Kwon, Heejeong Park, Woojin Park, Jung‐Dae Kwon, Yonghun Kim, Byungjin Cho,

Conducting polymers and applications

Advanced Functional MaterialsVolume 31, Issue 40 2170294 Cover PictureFree Access Low Power MoS2/Nb2O5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity (Adv. Funct. Mater. 40/2021) Jae Hyeon Nam, Jae Hyeon Nam Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644 Republic of KoreaSearch for more papers by this authorSeyoung Oh, Seyoung Oh Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644 Republic of Korea Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644 Republic of KoreaSearch for more papers by this authorHye Yeon Jang, Hye Yeon Jang Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644 Republic of KoreaSearch for more papers by this authorOjun Kwon, Ojun Kwon Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644 Republic of Korea Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644 Republic of KoreaSearch for more papers by this authorHeejeong Park, Heejeong Park Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644 Republic of Korea Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644 Republic of KoreaSearch for more papers by this authorWoojin Park, Woojin Park Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644 Republic of Korea Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644 Republic of KoreaSearch for more papers by this authorJung-Dae Kwon, Jung-Dae Kwon Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam, 51508 Republic of KoreaSearch for more papers by this authorYonghun Kim, Yonghun Kim Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam, 51508 Republic of KoreaSearch for more papers by this authorByungjin Cho, Byungjin Cho Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644 Republic of Korea Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644 Republic of KoreaSearch for more papers by this author Jae Hyeon Nam, Jae Hyeon Nam Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644 Republic of KoreaSearch for more papers by this authorSeyoung Oh, Seyoung Oh Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644 Republic of Korea Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644 Republic of KoreaSearch for more papers by this authorHye Yeon Jang, Hye Yeon Jang Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644 Republic of KoreaSearch for more papers by this authorOjun Kwon, Ojun Kwon Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644 Republic of Korea Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644 Republic of KoreaSearch for more papers by this authorHeejeong Park, Heejeong Park Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644 Republic of Korea Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644 Republic of KoreaSearch for more papers by this authorWoojin Park, Woojin Park Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644 Republic of Korea Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644 Republic of KoreaSearch for more papers by this authorJung-Dae Kwon, Jung-Dae Kwon Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam, 51508 Republic of KoreaSearch for more papers by this authorYonghun Kim, Yonghun Kim Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam, 51508 Republic of KoreaSearch for more papers by this authorByungjin Cho, Byungjin Cho Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644 Republic of Korea Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644 Republic of KoreaSearch for more papers by this author First published: 01 October 2021 https://doi.org/10.1002/adfm.202170294Citations: 2AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Graphical Abstract Heterosynaptic Plasticity In article number 2104174, Jung-Dae Kwon, Yonghun Kim, Byungjin Cho, and co-workers demonstrate a highly reliable 2D MoS2/Nb2O5 memtransistor device based on Schottky barrier modulation is demonstrated. The 2D/oxide memtransistor attains dual-terminal stimulated heterosynaptic plasticity, showing an extremely low power consumption of ≈6 pJ and reliable endurance characteristics over 2000 pulses. Finally, a high pattern recognition accuracy of ≈94.2% is achieved using a pattern recognition simulation, which promotes advanced neuromorphic systems. Citing Literature Volume31, Issue40October 1, 20212170294 RelatedInformation