Al 0.3 InAsSb/Al 0.7 InAsSb Digital Alloy nBn Photodetectors
2021; Institute of Electrical and Electronics Engineers; Volume: 40; Issue: 1 Linguagem: Inglês
10.1109/jlt.2021.3117507
ISSN1558-2213
AutoresRenjie Wang, Dekang Chen, J. Andrew McArthur, Xingjun Xue, Andrew H. Jones, Seth R. Bank, Joe C. Campbell,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoWe report Al 0.3 InAsSb/Al 0.7 InAsSb digital alloy n-barrier-n ( nBn ) photodetectors that operate in the 2-µm wavelength window. The Al x In 1-x As y Sb 1-y digital alloy material system exhibits near-zero valence-band offset, which is beneficial for nBn photodetectors. At 300 K these Al 0.3 InAsSb/Al 0.7 InAsSb nBn photodetectors have achieved specific detectivities of 1.7 × 10 10 and 3.0 × 10 10 Jones under 2-µm and 1.8-µm illumination, respectively. The dark current density at −0.5 V bias decreases from 3.1 × 10 −3 A/cm 2 at 300 K to 1.6 × 10 −10 A/cm 2 at 120 K, where the dominant dark current component is tunneling. The area-dependence of key performance parameters show that for mesa diameter ≤ 250 µm, surface defects assume a dominant role in the total noise.
Referência(s)