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Ultrasmall and ultradense InGaN-based RGB monochromatic micro-light-emitting diode arrays by pixilation of conductive p-GaN

2021; Optica Publishing Group; Volume: 9; Issue: 12 Linguagem: Inglês

10.1364/prj.439741

2327-9125

Zhe Zhuang, Daisuke Iida, Kazuhiro Ohkawa,

Plasma Diagnostics and Applications

We describe 5 μm squircle InGaN-based red, green, and blue (RGB) monochromatic micro-light-emitting diodes (μLEDs) with an interpitch of 4 μm by pixilation of conductive p-GaN using a H 2 -plasma treatment. The p-GaN was passivated by H 2 plasma and prevented the current’s injection into the InGaN quantum wells below. We observed that InGaN-based red μLEDs exhibited a broader full width at half-maximum and larger peak wavelength blueshift at 11.5 – 115 A / cm 2 than the green/blue μLEDs. The on-wafer light output power density of the red μLEDs at a wavelength of 632 nm at 115 A / cm 2 was approximately 936 mW/ cm 2 , the highest value reported thus far for InGaN-based red μLEDs. This value was comparable with that of the green/blue μLEDs at 11.5 A / cm 2 , indicating that the red μLEDs can satisfy the requirement of high brightness levels for specific displays. The color gamut based on InGaN RGB μLEDs covered 83.7% to 75.9% of the Rec. 2020 color space in the CIE 1931 diagram at 11.5 to 115 A / cm 2 .