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Broadband Au/n-GaSb Schottky photodetector array with a spectral range from 300 nm to 1700nm

2021; Optica Publishing Group; Volume: 29; Issue: 23 Linguagem: Inglês

10.1364/oe.443094

1094-4087

Junho Jang, Dae‐Myeong Geum, Sanghyeon Kim,

Semiconductor materials and interfaces

A broadband photodetector is becoming increasingly important as a key element for multicolor imaging. We proposed an Au/n-GaSb Schottky photodetector (PD) array with a wide spectral range from ultraviolet (UV) to short-wavelength infrared (SWIR). The PD was formed by deposition of a 5 nm-thick Au layer on the n-type GaSb substrate and subsequent mesa array formation. The fabricated PD array has shown uniform electrical characteristics and good rectifying behaviors. From the photoresponse measurement, the PD has shown uniformly high external quantum efficiency (EQE) over a spectral range of 300 nm to 1700nm. The value of EQE was 35% at 300 nm and exceeded 50% in the IR region. Furthermore, the PD has shown a rapid rise time of 1.44 µs from the transient photoresponse measurement.