Portal de Periódicos da CAPES

Low-threshold InP quantum dot and InGaP quantum well visible lasers on silicon (001)

2021; Optica Publishing Group; Volume: 8; Issue: 11 Linguagem: Inglês

10.1364/optica.443979

2334-2536

Pankul Dhingra, Patrick Su, Brian Li, Ryan D. Hool, Aaron J. Muhowski, Mijung Kim, Daniel Wasserman, John M. Dallesasse, Minjoo Larry Lee,

Semiconductor Lasers and Optical Devices

Monolithically combining silicon nitride ( S i N x ) photonics technology with III-V active devices could open a broad range of on-chip applications spanning a wide wavelength range of ∼ 400 − 4000 n m . With the development of nitride, arsenide, and antimonide lasers based on quantum well (QW) and quantum dot (QD) active regions, the wavelength palette of integrated III-V lasers on Si currently spans 400 nm to 11 µm, with a crucial gap in the red-wavelength regime of 630–750 nm. Here, we demonstrate red I n 0.6 G a 0.4 P QW and far-red InP QD lasers monolithically grown on CMOS-compatible Si (001) substrates with continuous-wave operation at room temperature. A low-threshold current density of 550 A / c m 2 and 690 A / c m 2 with emission at 680–730 nm was achieved for QW and QD lasers on Si, respectively. This work represents a step toward the integration of visible red lasers on Si, allowing the utilization of integrated photonics for applications including biophotonic sensing, quantum computing, and near-eye displays.