Electronic logic systems
1986; Elsevier BV; Volume: 10; Issue: 1 Linguagem: Inglês
10.1016/0141-9331(86)90009-8
ISSN1872-9436
Autores Tópico(s)Semiconductor Lasers and Optical Devices
ResumoGaAs MESFETs with novel lowly-doped drain structures have been developed utilizing molecular implants of silicon trifluoride. Short-channel effects in the 1/4 μm enhancement- and depletion-mode transistors have been suppressed with drain-induced barrier height lowering of less than 70 mV/V and pinch-off voltage shifts of less than 220 mV as the gate length was scaled from 1.0 to 1/4 μm. The 3-terminal breakdown, the transconductance to output conductance ratio, and the unity current gain, cut-off frequency were simultaneously optimized. The E-mode device possessed breakdown of >10 V, Gm · Rds > 9.5, Ft > 55 GHz, and nominal on-resistance of 2.1 Ω mm while the D-mode device had breakdown >10 V, Gm · Rds > 6.0, Ft > 45 GHz, and nominal on-resistance of 1.9 Ω mm. These optimized transistors enabled the realization of a variety of low-power digital and high-power mixed signal circuits, using 3-level source-coupled transistor and common-mode logic, such as laser and electro-optic drivers, highly integrated transceivers, multiplexers, demultiplexers, and clock data recover circuits.
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