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Investigation of Trap States, Series Resistance and Diode Parameters in Al/Gelatin/n-Si Schottky Diode by Voltage and Frequency Dependent Capacitance and Conductance Analysis

2022; Institute of Physics; Volume: 11; Issue: 2 Linguagem: Inglês

10.1149/2162-8777/ac4c7f

2162-8777

Şükrü Çavdar, Yeşim Demirölmez, Neslihan Turan, Haluk Koralay, Nihat Tuğluoğlu, L. Arda,

Integrated Circuits and Semiconductor Failure Analysis

Inorganic-organic Schottky contacts based on Gelatin on n-Si wafer have been prepared by a spin coating technique. The reverse and forward bias capacitance-voltage ( <?CDATA $C \mbox{-} V$?> C ‐ V ) and conductance-voltage ( <?CDATA $G \mbox{-} V$?> G ‐ V ) properties of the Al/Gelatin/n-Si Schottky diode at room temperature in the frequency range from 30 kHz to 1 MHz have been computed by taking into account the series resistance ( <?CDATA ${R}_{s}$?> R s ) and interface states ( <?CDATA ${D}_{{\rm{it}}}$?> D it ) effects. The conductance and Hill-Coleman method were used to determine interfacial layer capacitance ( <?CDATA ${C}_{{\rm{in}}}$?> C in ), <?CDATA ${R}_{s}$?> R s and <?CDATA ${D}_{it}.$?> D i t . The values of <?CDATA ${R}_{s}$?> R s and <?CDATA ${D}_{{\rm{it}}}$?> D it were determined as 810 Ω and 1.52 x −1 0 12 eV −1 cm −2 for 30 kHz and 38 Ω and 3.38 x 1 0 11 eV −1 cm −2 for 1 MHz. Experimental results corroborated that the <?CDATA ${R}_{s}$?> R s and <?CDATA ${D}_{{\rm{it}}}$?> D it are influential parameters which severely impact the basic electrical parameters of Al/Gelatin/n-Si Schottky diode. Both the measured capacitance ( <?CDATA ${C}_{m}$?> C m ) and conductance ( <?CDATA ${G}_{m}$?> G m ) were corrected in order to obtain the real diode capacitance ( <?CDATA ${C}_{c}$?> C c ) and conductance ( <?CDATA ${G}_{c}$?> G c ). Schottky diode parameters such as barrier height ( <?CDATA ${{\rm{\Phi }}}_{B}$?> Φ B ), ionized donor density ( <?CDATA ${N}_{D}$?> N D ), Fermi level ( <?CDATA ${E}_{F}$?> E F ), built-in voltage ( <?CDATA ${V}_{D}$?> V D ) were extracted from the frequency-dependent <?CDATA ${C}_{c} \mbox{-} V$?> C c ‐ V and <?CDATA $1/{C}_{c}^{2} \mbox{-} V$?> 1 / C c 2 ‐ V relations. The values of <?CDATA ${{\rm{\Phi }}}_{B}$?> Φ B was determined as 0.796 eV for 30 kHz and 1.090 eV for 1 MHz. The <?CDATA ${R}_{s}$?> R s and <?CDATA ${D}_{{\rm{it}}}$?> D it values were observed to decrease, while the <?CDATA ${{\rm{\Phi }}}_{B}$?> Φ B values increase as the frequency increases. Results reveal that the fabricated diode can potentially be used as a promising candidate material for electronics applications.