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Ionizing Radiation Effects in Silicon Photonics Modulators

2022; Institute of Electrical and Electronics Engineers; Volume: 69; Issue: 7 Linguagem: Inglês

10.1109/tns.2022.3148579

1558-1578

M. Lalović, Carmelo Scarcella, Anthony F. Bulling, S. Détraz, Leonardo Marcon, Lauri Olanterä, Thenia Prousalidi, U. Sandven, Christophe Sigaud, Csaba Soós, J. Troska,

Silicon Nanostructures and Photoluminescence

Silicon photonics (SiPh) shows considerable potential as a radiation-hard technology for building the optical data transmission links for future high-energy physics (HEP) experiments at CERN. Optical modulators are a key component of optical links, which will need to withstand radiation doses in excess of 10 MGy. The geometrical parameters and doping concentrations of two popular types of SiPh modulators, Mach–Zehnder and ring modulators (RMs), have been varied in order to study their impact on the device radiation tolerance. They were exposed to an X-ray beam to test their resistance to ionizing radiation. The RM with the highest doping concentration is shown to be the most tolerant, showing no degradation in performance up to the highest dose of 11 MGy. Moreover, we report first evidence of the dependence of the radiation tolerance on the RM operating temperature.