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Recent Progresses in GaN Power Rectifier

2012; Institute of Physics; Volume: 51; Issue: 1S Linguagem: Inglês

10.7567/jjap.51.01ag08

1347-4065

Daniel Alquier, F. Cayrel, Olivier Ménard, Anne-Elisabeth Bazin, Arnaud Yvon, Emmanuel Collard,

Semiconductor materials and devices

In this work, both "Schottky to Schottky" structure (STS) and pseudo-vertical Schottky barrier diode (pv-SBD) have been processed on GaN heteroepitaxially grown on sapphire or silicon by metal organic chemical vapor deposition (MOCVD) and characterized physically and electrically. Ni and Ti/Al were used to obtain respectively Schottky and Ohmic contacts using rapid thermal annealing (RTA). Adequate passivation steps and insertion of a resistive guard ring were also implemented in pv-SBD. The STS results, presented in this paper, evidence the impact of the substrate on the growth as well as all the progresses that have been done on GaN material quality. Furthermore, we demonstrate that high quality Schottky diodes can be obtained on GaN grown on sapphire by MOCVD. Indeed, ideality factors of 1.09 as well as a barrier height of 1.06 eV were obtained on pv-SBD devices that have a breakdown voltage over 600 V.