Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga 2 O 3 with high hole mobility
2022; Royal Society of Chemistry; Volume: 10; Issue: 17 Linguagem: Inglês
10.1039/d1tc05324h
ISSN2050-7534
AutoresCongcong Ma, Zhengyuan Wu, Zhuoxun Jiang, Ying Chen, Wei Ruan, Hao Zhang, Heyuan Zhu, Guoqi Zhang, Junyong Kang, Tong‐Yi Zhang, Junhao Chu, Z. Fang,
Tópico(s)ZnO doping and properties
ResumoThe feasibility and conductivity mechanisms of p-type N-doped β-Ga 2 O 3 are demonstrated and clarified using first-principles hybrid functional calculations and the phase transition technique.
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