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Mechanical Switching of Ferroelectric Domains in 33‐200 nm‐Thick Sol‐Gel‐Grown PbZr 0.2 Ti 0.8 O 3 Films Assisted by Nanocavities

2022; Wiley; Volume: 8; Issue: 9 Linguagem: Inglês

10.1002/aelm.202200077

2199-160X

Sergio Gonzalez Casal, Xiaofei Bai, Kévin Alhada−Lahbabi, B. Canut, Bertrand Vilquin, Pédro Rojo Romeo, Solène Brottet, David Abertini, Damien Deleruyelle, Matthieu Bugnet, I. C. Infante, Brice Gautier,

Acoustic Wave Resonator Technologies

Abstract The mechanical switching of ferroelectric domains is achieved in PbZr 0.2 Ti 0.8 O 3 thin films obtained by the sol‐gel method for thicknesses up to 200 nm. The dielectric polarization can be switched when a force higher than a given threshold value in the order of some μNewtons is applied with the tip of an atomic force microscope. This threshold is determined as a function of the thickness of the films, and local hysteresis loops are recorded under mechanical stress. The possibility of switching the polarization in such unusually thick films is related to the existence in their volume of physical nanoscale defects, which might play the role of pinning centers for the domains.