High-sensitivity characterization of ultra-thin atomic layers using spin-Hall effect of light
2022; American Institute of Physics; Volume: 132; Issue: 7 Linguagem: Inglês
10.1063/5.0102355
ISSN1520-8850
AutoresJanmey Jay Panda, Krishna Rani Sahoo, Aparna Praturi, Ashique Lal, Nirmal K. Viswanathan, Tharangattu N. Narayanan, G. Rajalakshmi,
Tópico(s)Magnetic properties of thin films
ResumoThe fast-emerging diverse applications using a variety of magnetic/non-magnetic heterostructure ultra-thin films warrant the sensitive characterization of the electrical, optical, and magnetic properties of the interface. As a practical alternate to the conventional magneto-optic Kerr effect (MOKE) method, we propose and demonstrate the spin-Hall effect of the light (SHEL)-based MOKE method with competitive sensitivity and scope for further improvement. The SHEL-MOKE technique is a versatile surface characterization tool for studying materials’ magnetic and dielectric ordering, which are extracted from the variations to the phase-polarization characteristics of a focused beam of light reflected at the interface, as a function of the applied magnetic field. Using this technique, we measure the magnetic field dependent complex Kerr angle and the coercivity in ultra-thin films of permalloy (Py) and at molybdenum disulfide (MoS2)—permalloy (MSPy) hetero-structure interfaces. A comprehensive theoretical model and simulation data are provided to strengthen the potential of this simple non-invasive optical method. The theoretical model is subsequently applied to extract the optical conductivity of non-magnetic ultra-thin layers of MoS2.
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