Enhancing transparent thermoelectric properties of Sb-doped ZnO thin films via controlled deposition temperature
2022; Elsevier BV; Volume: 202; Linguagem: Inglês
10.1016/j.vacuum.2022.111137
ISSN1879-2715
AutoresAnh Tuấn Thanh Phạm, Oanh Kieu Truong Le, Trang Thuy Thi Phan, Dung Van Hoang, Trương Hữu Nguyễn, Ngoc Duong Le, Thắng Bách Phan, Vinh Cao Trần,
Tópico(s)Perovskite Materials and Applications
ResumoZnO is known as a wide-bandgap transparent thermoelectric material. Herein, the electronic transport and temperature-dependent thermoelectric properties of transparent Sb-doped ZnO (SZO) films are reported. The sputtered SZO films prepared at the optimum deposition temperature of 673 K show an n-type semiconducting behavior with the highest thermoelectric power factor of 406 μW/mK 2 at 773 K, and a good transmittance ∼82% in the wavelength region of 400–1100 nm. It can well meet the requirements for transparent thermoelectric thin films. Through X-ray diffraction, UV–Vis, and photoluminescence analyses, the Zn 2+ substitution by Sb 5+ can be elucidated for significantly enhancing the Seebeck coefficient and thermoelectric power factor due to the increase of density-of-state effective mass. • Transparent thermoelectric thin films have a large potential for hybrid thermoelectric-photovoltaic applications. • Sb doping shows a significant improvement in thermoelectric properties of sputtered ZnO thin films. • An increase of DOS effective mass significantly increases Seebeck coefficient with elevating deposition temperature. • At the optimum deposition temperature of 673 K, the Sb-doped ZnO films obtain the highest PF of 406 μW/mK 2 at 773 K.
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