Magnetization and magnetic susceptibility of the diluted magnetic semiconductor Cd1− x Mn x S
1991; American Institute of Physics; Volume: 69; Issue: 8 Linguagem: Inglês
10.1063/1.347784
ISSN1520-8850
AutoresChen-jia Chen, Ming Qu, Wei Hu, Xin Zhang, Feng Lin, Hongbing Hu, Kejun Ma, W. Giriat,
Tópico(s)Chalcogenide Semiconductor Thin Films
ResumoResults of experiments done to measure the magnetization and magnetic susceptibility in Cd1−xMnxS are given. The measurements were performed on the samples with x=0.03, 0.05, 0.1, 0.15, 0.2, 0.3, 0.4, and 0.45 in the temperature range 1.5 K≤T≤300 K and with magnetic fields up to 7 T by using a vibrating-sample magnetometer and the extraction method. A modified Brillouin function fits the magnetization data and the fitting parameters T0 and xeff are obtained at T=1.5 K for different compositions. The susceptibility displays a high-temperature Curie–Weiss behavior. From quantitative analysis we obtain the value of the exchange integral constant 2J/kB to be −25.9 K. By using our results in conjunction with a direct measurement of the nearest-neighbor exchange JNN from high-field magnetization steps and Raman scattering, we obtain an estimate of the next-nearest-neighbor exchange constant J2/kB = −4.7 K.
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