Microwave plasma etching
1984; Elsevier BV; Volume: 34; Issue: 10-11 Linguagem: Inglês
10.1016/0042-207x(84)90177-5
ISSN1879-2715
AutoresKeizô Suzuki, Ken Ninomiya, Shigeru Mishimatsu,
Tópico(s)Metal and Thin Film Mechanics
ResumoA microwave plasma etching technique, which uses a microwave discharge with magnetic fields instead of a conventional rf discharge, has been developed. Submicron delineation with minimal surface damage and contamination can be performed with this technique. The motivation for developing the microwave plasma etching technique and the construction of the apparatus are described. Mechanisms for anisotropic and isotropic etching with this technique are discussed in terms of the experimentally obtained plasma parameters. A method for increasing the Si etch rate is presented in relation to the effects of surface covering films. These films can be detected by XPS measurements performed without exposing the etched surface to the atmosphere.
Referência(s)