An experimental study of an interface reaction at the practical Pd/Si interface by XPS
1995; Elsevier BV; Volume: 46; Issue: 2 Linguagem: Inglês
10.1016/0042-207x(95)80070-0
ISSN1879-2715
Autores Tópico(s)Electron and X-Ray Spectroscopy Techniques
ResumoX-ray photoelectron spectroscopy (XPS) measurements of core-level and valence band have been used to study the practical Pd/Si interface. Evidence of silicide, Pd2Si, formed by chemical reaction at this interface has been obtained. A monotonic increase of the branching ratio for two Pd 3d spin-orbit split peaks of silicide, Pd2Si, with decreasing photoemission angles was measured. Some possible interpretations for this change are also presented.
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