MATERIAL PROPERTIES
2006; World Scientific; Linguagem: Romeno
10.1142/9789812773371_0001
ISSN1793-1274
AutoresGERHARD PENSL, FLORIN CIOBANU, THOMAS FRANK, MICHAEL KRIEGER, SERGEY RESHANOV, FRANK SCHMID, MICHAEL WEIDNER,
ResumoSelected Topics in Electronics and SystemsSiC Materials and Devices, pp. 1-41 (2006) No AccessSiC MATERIAL PROPERTIESGERHARD PENSL, FLORIN CIOBANU, THOMAS FRANK, MICHAEL KRIEGER, SERGEY RESHANOV, FRANK SCHMID and MICHAEL WEIDNERGERHARD PENSLInstitute of Applied Physics, University of Erlangen-Nürnberg, Staudtstrasse 7, D-91058 Erlangen, Germany, FLORIN CIOBANUInstitute of Applied Physics, University of Erlangen-Nürnberg, Staudtstrasse 7, D-91058 Erlangen, Germany, THOMAS FRANKInstitute of Applied Physics, University of Erlangen-Nürnberg, Staudtstrasse 7, D-91058 Erlangen, Germany, MICHAEL KRIEGERInstitute of Applied Physics, University of Erlangen-Nürnberg, Staudtstrasse 7, D-91058 Erlangen, Germany, SERGEY RESHANOVInstitute of Applied Physics, University of Erlangen-Nürnberg, Staudtstrasse 7, D-91058 Erlangen, Germany, FRANK SCHMIDInstitute of Applied Physics, University of Erlangen-Nürnberg, Staudtstrasse 7, D-91058 Erlangen, Germany and MICHAEL WEIDNERInstitute of Applied Physics, University of Erlangen-Nürnberg, Staudtstrasse 7, D-91058 Erlangen, Germanyhttps://doi.org/10.1142/9789812773371_0001Cited by:13 PreviousNext AboutSectionsPDF/EPUB ToolsAdd to favoritesDownload CitationsTrack CitationsRecommend to Library ShareShare onFacebookTwitterLinked InRedditEmail Abstract: This chapter briefly summarizes device-relevant material properties of the wide bandgap semiconductor silicon carbide. The polytypes 4H-, 6H- and 3C-SiC are predominantly considered. These SiC polytypes can reproducibly be grown as single crystals; they have superior electronic and thermal material properties. The conductivity type can be adjusted by shallow donors and acceptors. Special sections are related to the diffusion of dopants, to the impurity conduction, to the minority carrier lifetime and to the different types of traps generated at the interface of thermally grown SiC/SiO2 structures. FiguresReferencesRelatedDetailsCited By 13Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC)F. Roccaforte, G. Greco, P. Fiorenza, S. Di Franco and F. Giannazzo et al.1 Dec 2022 | Applied Surface Science, Vol. 606Materials and Processes for Schottky Contacts on Silicon CarbideMarilena Vivona, Filippo Giannazzo and Fabrizio Roccaforte31 December 2021 | Materials, Vol. 15, No. 1Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration systemChen Huang, Haochen Zhang and Haiding Sun1 Nov 2020 | Nano Energy, Vol. 77Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n- and p-implanted 4H-SiCM Vivona, G Greco, F Giannazzo, R Lo Nigro and S Rascunà et al.29 May 2014 | Semiconductor Science and Technology, Vol. 29, No. 7Guidelines for developing power stage layouts using normally-off SiC JFETs based on parasitic analysisCorris Stewart, Andres Escobar-Mejia and Juan Carlos Balda1 Sep 2013Novel AC-Coupled Gate Driver for Ultrafast Switching of Normally Off SiC JFETsBenjamin Wrzecionko, Dominik Bortis, Jürgen Biela and Johann W. Kolar1 Jul 2012 | IEEE Transactions on Power Electronics, Vol. 27, No. 7Effects of Different Post-Implantation Annealing Conditions on the Electrical Properties of Interfaces to p-Type Implanted 4H-SiCAlessia Frazzetto, Fabrizio Roccaforte, Filippo Giannazzo, R. Lo Nigro and M. Saggio et al.1 May 2012 | Materials Science Forum, Vol. 717-720Microstructure and Transport Properties in Alloyed Ohmic Contacts to P-Type SiC and GaN for Power Devices ApplicationsFabrizio Roccaforte, Alessia Frazzetto, Giuseppe Greco, Raffaella Lo Nigro and Filippo Giannazzo et al.1 January 2012 | Materials Science Forum, Vol. 711Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperatureA Frazzetto, F Giannazzo, R Lo Nigro, V Raineri and F Roccaforte7 June 2011 | Journal of Physics D: Applied Physics, Vol. 44, No. 25Novel AC coupled gate driver for ultra fast switching of normally-off SiC JFETsBenjamin Wrzecionko, Stefan Kach, Dominik Bortis, Jurgen Biela and Johann W. Kolar1 Nov 2010Nanoscale transport properties at silicon carbide interfacesF Roccaforte, F Giannazzo and V Raineri18 May 2010 | Journal of Physics D: Applied Physics, Vol. 43, No. 22Fundamental physical limitations on the blocking voltage of SiC rectifier diodesT T Mnatsakanov, M E Levinshtein, L I Pomortseva and J W Palmour24 November 2009 | Semiconductor Science and Technology, Vol. 24, No. 12SiC power semiconductors in HEVs: Influence of junction temperature on power density, chip utilization and efficiencyBenjamin Wrzecionko, Jurgen Biela and Johann W. Kolar1 Nov 2009 SiC Materials and DevicesMetrics History PDF download
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