Device Simulation Demands of Upcoming Microelectronics Devices
2006; Frontiers Media; Linguagem: Inglês
10.1142/9789812773081_0008
ISSN2673-5857
Autores Tópico(s)Advancements in Semiconductor Devices and Circuit Design
ResumoSelected Topics in Electronics and SystemsFrontiers in Electronics, pp. 115-136 (2006) No AccessDevice Simulation Demands of Upcoming Microelectronics DevicesHans Kosina and Siegfried SelberherrHans KosinaInstitute for Microelectronics, TU Vienna, Gusshausstrasse 27–29, A-1040 Vienna, Austria and Siegfried SelberherrInstitute for Microelectronics, TU Vienna, Gusshausstrasse 27–29, A-1040 Vienna, Austriahttps://doi.org/10.1142/9789812773081_0008Cited by:0 PreviousNext AboutSectionsPDF/EPUB ToolsAdd to favoritesDownload CitationsTrack CitationsRecommend to Library ShareShare onFacebookTwitterLinked InRedditEmail Abstract: An overview of models for the simulation of current transport in micro- and nanoelectronic devices within the framework of TCAD applications is presented. Starting from macroscopic transport models, currently discussed enhancements are specifically addressed. This comprises the inclusion of higher-order moments into the transport models, the incorporation of quantum correction and tunneling models up to dedicated quantum-mechanical simulators, and mixed approaches which are able to account for both, quantum interference and scattering. Specific TCAD requirements are discussed from an engineer's perspective and an outlook on future research directions is given. Keywords: MicroelectronicsTCADdevice simulationtransport modelsquantum effects FiguresReferencesRelatedDetails Frontiers in ElectronicsMetrics History KeywordsMicroelectronicsTCADdevice simulationtransport modelsquantum effectsPDF download
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