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NMR Study on Heavily Doped Silicon. I

1974; Physical Society of Japan; Volume: 36; Issue: 5 Linguagem: Inglês

10.1143/jpsj.36.1377

1347-4073

Wataru Sasaki, Seiichiro Ikehata, Shun-ichi Kobayashi,

Thin-Film Transistor Technologies

NMR line shape, Knight shift and relaxation time are measured on 29 Si and 31 P in silicon with phosphorus concentrations ranging from 3.4×10 17 cm -3 to 9.6×10 19 cm -3 over a temperature region from 0.4 to 4.2 K. The behaviors of these absorption lines are shown to correspond to the three types of impurity conduction. These behaviors are discussed in connection with the metal-nonmetal transition and random nature of the system. The result in metallic samples is interpreted in terms of the electron gas with correlation.