The silicon vacancy in SiC
2009; Elsevier BV; Volume: 404; Issue: 22 Linguagem: Inglês
10.1016/j.physb.2009.09.023
ISSN1873-2135
AutoresErik Janzén, Ádám Gali, Patrick Carlsson, Andreas Gällström, Björn Magnusson, Nguyên Tiên Són,
Tópico(s)Semiconductor materials and devices
ResumoThe isolated silicon vacancy is one of the basic intrinsic defects in SiC. We present new experimental data as well as new calculations on the silicon vacancy defect levels and a new model that explains the optical transitions and the magnetic resonance signals observed as occurring in the singly negative charge state of the silicon vacancy in 4H and 6H SiC.
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