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Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing

2022; Nature Portfolio; Volume: 13; Issue: 1 Linguagem: Inglês

10.1038/s41467-022-30519-w

2041-1723

Baoshan Tang, Hasita Veluri, Yida Li, Zhi Gen Yu, Moaz Waqar, Jin Feng Leong, Maheswari Sivan, Evgeny Zamburg, Yong‐Wei Zhang, John Wang, A. V-Y. Thean,

Perovskite Materials and Applications

Abstract Realization of high-density and reliable resistive random access memories based on two-dimensional semiconductors is crucial toward their development in next-generation information storage and neuromorphic computing. Here, wafer-scale integration of solution-processed two-dimensional MoS 2 memristor arrays are reported. The MoS 2 memristors achieve excellent endurance, long memory retention, low device variations, and high analog on/off ratio with linear conductance update characteristics. The two-dimensional nanosheets appear to enable a unique way to modulate switching characteristics through the inter-flake sulfur vacancies diffusion, which can be controlled by the flake size distribution. Furthermore, the MNIST handwritten digits recognition shows that the MoS 2 memristors can operate with a high accuracy of >98.02%, which demonstrates its feasibility for future analog memory applications. Finally, a monolithic three-dimensional memory cube has been demonstrated by stacking the two-dimensional MoS 2 layers, paving the way for the implementation of two memristor into high-density neuromorphic computing system.