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Effects of three-body diamond abrasive polishing on silicon carbide surface based on molecular dynamics simulations

2022; Elsevier BV; Volume: 129; Linguagem: Inglês

10.1016/j.diamond.2022.109368

1879-0062

Zhetian Bian, Tinghong Gao, Yue Gao, Bei Wang, Yutao Liu, Quan Xie, Qian Chen, Qingquan Xiao, Yongchao Liang,

Metal and Thin Film Mechanics

Recently, SiC has gained considerable interest owing to its avant-garde nature and relevance in future applications. Molecular dynamics simulation was performed to investigate nanopolishing of three-body diamond abrasives on workpieces that had undergone cluster deposition and annealing processes. The coordination number, temperature, atomic distribution, kinetic energy, friction coefficient, crystallization, and average height of the workpiece were determined. Further, the effects of different polishing depths and polishing speeds on the physical properties of the workpiece were determined. Results show that polishing depth considerably affects the coordination number, surface morphology, friction coefficient, crystallization, and temperature of the workpiece. The surface of the workpiece was polished while maintaining the crystallization rate at a polishing depth of 20 Å. With an increase in the polishing rate, the coefficient of friction decreased, the temperature of the workpiece increased, and the polishing trajectory became clearer, with a better crystallization at 1 Å/ps.