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p-Si nanowires/SiO2/n-ZnO heterojunction photodiodes

2010; American Institute of Physics; Volume: 97; Issue: 1 Linguagem: Inglês

10.1063/1.3462319

1520-8842

Chun‐Ying Huang, Ying‐Jay Yang, Ju-Ying Chen, Chun-Hsiung Wang, Yang‐Fang Chen, Lu‐Sheng Hong, Chie-Sheng Liu, Chia‐Yin Wu,

ZnO doping and properties

Influence of a SiO2 ultrathin film on n-ZnO/p-silicon nanowires photodiodes has been investigated. With a SiO2 thin layer, the diode characteristics can be significantly improved, which exhibits high responsivity under a reverse bias. Based on the electron conversion efficiency measurement, we show that the ultrathin SiO2 layer with positive fixed charges not only acts as a hole blocking layer but also helps the photogenerated electrons to tunnel through the barrier. In addition, the SiO2 layer can effectively passivate the defects generated by wet etching process. It is expected that our approach can be extended to many other nanoscale heterojunction devices.