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Disentanglement of intrinsic and extrinsic side-jump scattering induced spin Hall effect in N-implanted Pt

2023; American Physical Society; Volume: 107; Issue: 6 Linguagem: Inglês

10.1103/physrevb.107.064402

2469-9977

Utkarsh Shashank, Y. Nakamura, Yu Kusaba, Takafumi Tomoda, Razia Nongjai, Asokan Kandasami, Rohit Medwal, Rajdeep Singh Rawat, Hironori Asada, Surbhi Gupta, Yasuhiro Fukuma,

Quantum and electron transport phenomena

The rapidly evolving utilization of spin Hall effect (SHE) arising from spin-orbit coupling in $5d$ transition metals and alloys has made giant strides in the development of designing low-power, robust, and nonvolatile magnetic memory. Recent studies, on incorporating nonmetallic lighter elements such as oxygen, nitrogen, and sulfur into $5d$ transition metals, have shown an enhancement in dampinglike torque efficiency ${\ensuremath{\theta}}_{\mathrm{DL}}$ due to the modified SHE, but the mechanism behind this enhancement is not clear. In this paper, we study ${\ensuremath{\theta}}_{\mathrm{DL}}$ at different temperatures (100--293 K) to disentangle the intrinsic and extrinsic side-jump scattering induced SHE in N-implanted Pt. We observe a crossover of intrinsic to extrinsic side-jump mechanism as the implantation dose increases from $2\ifmmode\times\else\texttimes\fi{}{10}^{16}$ to $1\ifmmode\times\else\texttimes\fi{}{10}^{17}\phantom{\rule{0.16em}{0ex}}\mathrm{ions}/\mathrm{c}{\mathrm{m}}^{2}$. A sudden decrease in the intrinsic spin Hall conductivity is counterbalanced by the increase in the extrinsic side-jump induced SHE efficiency. These results conclude that studying ${\ensuremath{\theta}}_{\mathrm{DL}}$ as a function of implantation dose, and as a function of temperature, is important to understand the physical mechanism contributing to SHE.