A METHOD FOR THE CALCULATION OF DEFECT EQUILIBRIUM IN ZnS: Cu: Al: Bi: Cl
1996; Estonian Academy Publishers; Volume: 45; Issue: 3/4 Linguagem: Inglês
10.3176/chem.1996.3/4.06
ISSN2228-0693
Autores Tópico(s)Surface and Thin Film Phenomena
ResumoA method for solving the system of quasichemical equations for the description of the high temperature equilibrium of defects is presented.This method enables to create a model of the high temperature equilibrium of defects for ZnS crystals doped with up to four types of foreign atoms.
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