Portal de Periódicos da CAPES

A steep-switching impact ionization-based threshold switching field-effect transistor

2023; Royal Society of Chemistry; Volume: 15; Issue: 12 Linguagem: Inglês

10.1039/d2nr06547a

2040-3372

Chanwoo Kang, Haeju Choi, Hyeonje Son, Taeho Kang, Sangmin Lee, Sungjoo Lee,

Semiconductor materials and devices

A steep switching transistor (subthreshold swing, SS ∼32.8 mV dec −1 ) with low dielectric injection efficiency (Δ I GS /Δ I DS ∼10 −6 is constructed by connecting an MoS 2 FET and a WSe 2 impact-ionisation based threshold switch.