Cu based electrically programmable fuse characteristics for CMOS technology
2023; Elsevier BV; Volume: 49; Linguagem: Inglês
10.1016/j.cap.2023.02.016
ISSN1878-1675
AutoresHonggyun Kim, Jamal Aziz, Vijay D. Chavan, Deok-kee Kim,
Tópico(s)Advanced Memory and Neural Computing
ResumoConventional electrically programmable fuse (eFuse) includes a cathode, anode and a fuse link in between, which can be programmed by an external stimulus. In this study, programming characteristics of M1 and M2 Cu eFuse with or without a programming transistor were investigated in 28-nm CMOS technology. M2 eFuse showed a lower programming current density than M1 eFuse, and wide eFuse (M1or M2) showed a lower programming current density than narrow eFuse. Also, the heat dissipation in M2 eFuse was lower than M1 eFuse due to surrounding ultra-low-k dielectric (ULK) with low thermal conductivity. The area dependence of eFuse was also investigated. The dissipated heat in wide Cu eFuse was higher than narrow Cu eFuse due to more generated power per unit volume in wide eFuse. As compared to M1 eFuse, M2 wide eFuse with ULK surrounding medium proved to be a promising candidate for the future eFuse option with the minimal statistical variations and lowest programming current.
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