Artigo
Acesso aberto
Understanding field scattering in AlGaN/GaN heterostructure field-effect transistors
2023; Issue: 135 Linguagem: Inglês
10.32907/ro-135-4287559770
ISSN2517-7028
Tópico(s)Ga2O3 and related materials
ResumoThe next generation of field-effect transistors could have wide-ranging applications.
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