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Spin-valley coupling and spin-relaxation anisotropy in all-CVD Graphene- MoS 2 van der Waals heterostructure

2023; American Physical Society; Volume: 7; Issue: 4 Linguagem: Inglês

10.1103/physrevmaterials.7.044005

2476-0455

Md. Anamul Hoque, Vasudev Ramachandra, Antony George, Emad Najafidehaghani, Ziyang Gan, Richa Mitra, Bing Zhao, Dmitrii Khokhriakov, Andrey Turchanin, Samuel Lara‐Avila, Sergey Kubatkin, Saroj P. Dash,

Quantum and electron transport phenomena

Two-dimensional (2D) van der Waals (vdW) heterostructures fabricated by combining 2D materials with unique properties into one ultimate unit can offer a plethora of fundamental phenomena and practical applications. Recently, proximity-induced quantum and spintronic effects have been realized in heterostructures of graphene (Gr) with 2D semiconductors and their twisted systems. However, these studies are so far limited to exfoliated flake-based devices, limiting their potential for scalable practical applications. Here, we report spin-valley coupling and spin-relaxation anisotropy in Gr-${\mathrm{MoS}}_{2}$ heterostructure devices prepared from scalable chemical vapor-deposited (CVD) 2D materials. Spin precession and dynamics measurements reveal an enhanced spin-orbit coupling strength in the Gr-${\mathrm{MoS}}_{2}$ heterostructure in comparison with pristine Gr at room temperature. Consequently, large spin-relaxation anisotropy is observed in the heterostructure, providing a method for spin filtering due to spin-valley coupling. These findings open a scalable platform for all-CVD 2D vdW heterostructures design and their device applications.