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Exchange‐Biased Quantum Anomalous Hall Effect

2023; Volume: 35; Issue: 31 Linguagem: Inglês

10.1002/adma.202300391

1521-4095

Peng Zhang, Purnima P. Balakrishnan, Chris Eckberg, Peng Deng, Tomohiro Nozaki, Su Kong Chong, Patrick Quarterman, Megan E. Holtz, Brian B. Maranville, Gang Qiu, Lei Pan, Eve Emmanouilidou, Ni Ni, M. Sahashi, Alexander J. Grutter, Kang L. Wang,

Graphene research and applications

Abstract The quantum anomalous Hall (QAH) effect is characterized by a dissipationless chiral edge state with a quantized Hall resistance at zero magnetic field. Manipulating the QAH state is of great importance in both the understanding of topological quantum physics and the implementation of dissipationless electronics. Here, the QAH effect is realized in the magnetic topological insulator Cr‐doped (Bi,Sb) 2 Te 3 (CBST) grown on an uncompensated antiferromagnetic insulator Al‐doped Cr 2 O 3 . Through polarized neutron reflectometry (PNR), a strong exchange coupling is found between CBST and Al‐Cr 2 O 3 surface spins fixing interfacial magnetic moments perpendicular to the film plane. The interfacial coupling results in an exchange‐biased QAH effect. This study further demonstrates that the magnitude and sign of the exchange bias can be effectively controlled using a field training process to set the magnetization of the Al‐Cr 2 O 3 layer. It demonstrates the use of the exchange bias effect to effectively manipulate the QAH state, opening new possibilities in QAH‐based spintronics.