Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors
2023; Nature Portfolio; Volume: 18; Issue: 9 Linguagem: Inglês
10.1038/s41565-023-01399-y
ISSN1748-3395
AutoresKwan‐Ho Kim, Seyong Oh, Merrilyn Mercy Adzo Fiagbenu, Jeffrey Zheng, Pariasadat Musavigharavi, Pawan Kumar, Nicholas Trainor, Areej Aljarb, Yi Wan, Hyong Min Kim, Keshava Katti, Seunguk Song, Gwangwoo Kim, Zichen Tang, Jui‐Han Fu, Mariam Hakami, Vincent Tung, Joan M. Redwing, Eric A. Stach, Roy H. Olsson, Deep Jariwala,
Tópico(s)Ferroelectric and Piezoelectric Materials
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