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Effect of the tri-sodium citrate as a complexing agent in the deposition of ZnS by SILAR

2023; Elsevier BV; Volume: 9; Issue: 7 Linguagem: Inglês

10.1016/j.heliyon.2023.e17971

2405-8440

Jesús Octavio Sígala-Valdez, Obed Yamil Ramirez-Ezquivel, Celina Lizeth Castañeda-Miranda, Harumi Moreno-García, Rocío García-Rocha, Ismailía L. Escalante-García, A. Del Rı́o-De Santiago,

Copper-based nanomaterials and applications

Using the SILAR method Zinc sulfide coatings were deposited on glass slices. The physical properties and the chemical mechanism throughout the variation in concentration of tri-sodium citrate (TSC) as a chelating agent in the synthesis of thin films were investigated. Results shows that ZnS thin films exhibit an average transmittance of 16% in visible light spectra region and a zinc blende structure. The ZnS films synthesized using TSC as a complexing agent, present a smaller average particle size, an average transmittance of 85%, and an adsorption edge at 300–340 nm. Based on our experimental data and analysis, we conclude that the contribution of the oxychloride species, a subproduct in the chemical deposition, is suggested to be related as an impurity level former in the synthesis of ZnS thin films. TSC as a complexing agent in the SILAR technique is a non-toxic option to reduce the generation of the oxychloride species and synthesize a wide band gap semiconductor. Moreover, the use of complexing agents could be extended to other types of semiconductors deposited by SILAR.