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Integration of Ag Plasmonic Metal and WO 3 /InGaN Heterostructure for Photoelectrochemical Water Splitting

2023; American Chemical Society; Volume: 15; Issue: 29 Linguagem: Inglês

10.1021/acsami.3c05141

1944-8252

Devarajulu Gelija, Chadrasekhar Loka, Mahendra Goddati, Na-Hyun Bak, Jaebeom Lee, Moon‐Deock Kim,

ZnO doping and properties

In this study, a Ag/WO3/InGaN hybrid heterostructure was successfully developed by sputtering and molecular beam epitaxy techniques, to obtain unique Ag nanospheres adorned with cauliflower-like WO3 nanostructure over the InGaN nanorods (NRs). Exploiting the localized surface plasmon resonance of Ag, the Ag/WO3/InGaN heterostructure exhibited superior photoabsorption ability in the visible region (400-700 nm) of the solar spectrum, with a surface plasmon resonance band centered around 440 nm. Comprehensive analysis through photoluminescence spectroscopy, photocurrent measurements, and electrochemical impedance spectroscopy revealed that the Ag/WO3/InGaN hybrid heterostructure significantly enhances the charge carrier separation and transfer kinetics leading to improved overall photoelectrochemical (PEC) performance. The photocurrent density of the Ag/WO3/InGaN photoanode is 1.17 mA/cm2, which is about 2.72 times higher than that of pure InGaN NRs under visible light irradiation. The photoanode exhibited excellent stability for about 12 h. From the study, it has been found that the maximum applied bias photon-to-current efficiency (ABPE) is ∼1.67% at the applied bias of 0.6 V. The improved PEC water splitting efficiency of the Ag/WO3/InGaN photoanode is attributed to the synergistic effects of localized surface plasmon resonance (LSPR), efficient charge carrier separation and transport, and the presence of a Schottky junction. Consequently, the plasmonic metal-assisted heterojunction-based semiconductor Ag/WO3/InGaN demonstrates immense potential for practical applications in photoelectrochemical water splitting.