Effect of Al Concentration on Ferroelectric Properties in HfAlO x ‐Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications
2023; Wiley; Volume: 5; Issue: 8 Linguagem: Inglês
10.1002/aisy.202370036
ISSN2640-4567
AutoresJihyung Kim, Dahye Kim, Kyung Kyu Min, Matthias Kraatz, Taeyoung Han, Sungjun Kim,
Tópico(s)Neural Networks and Applications
ResumoAdvanced Intelligent SystemsVolume 5, Issue 8 2370036 Back CoverOpen Access Effect of Al Concentration on Ferroelectric Properties in HfAlOx-Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications Jihyung Kim, Jihyung Kim Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620 South KoreaSearch for more papers by this authorDahye Kim, Dahye Kim Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620 South Korea Nanomechanics and Reliability for Microelectronics, Fraunhofer IKTS, 01109 Dresden, GermanySearch for more papers by this authorKyung Kyu Min, Kyung Kyu Min Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826 Republic of KoreaSearch for more papers by this authorMatthias Kraatz, Matthias Kraatz Nanomechanics and Reliability for Microelectronics, Fraunhofer IKTS, 01109 Dresden, GermanySearch for more papers by this authorTaeyoung Han, Taeyoung Han Biodegradation and Nanofunctionalization, Fraunhofer IKTS, Maria-Reiche-Str.2, 01109 Dresden, GermanySearch for more papers by this authorSungjun Kim, Corresponding Author Sungjun Kim [email protected] orcid.org/0000-0002-9873-2474 Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620 South KoreaSearch for more papers by this author Jihyung Kim, Jihyung Kim Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620 South KoreaSearch for more papers by this authorDahye Kim, Dahye Kim Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620 South Korea Nanomechanics and Reliability for Microelectronics, Fraunhofer IKTS, 01109 Dresden, GermanySearch for more papers by this authorKyung Kyu Min, Kyung Kyu Min Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826 Republic of KoreaSearch for more papers by this authorMatthias Kraatz, Matthias Kraatz Nanomechanics and Reliability for Microelectronics, Fraunhofer IKTS, 01109 Dresden, GermanySearch for more papers by this authorTaeyoung Han, Taeyoung Han Biodegradation and Nanofunctionalization, Fraunhofer IKTS, Maria-Reiche-Str.2, 01109 Dresden, GermanySearch for more papers by this authorSungjun Kim, Corresponding Author Sungjun Kim [email protected] orcid.org/0000-0002-9873-2474 Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620 South KoreaSearch for more papers by this author First published: 21 August 2023 https://doi.org/10.1002/aisy.202370036AboutPDF ToolsExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Graphical Abstract Ferroelectric Tunnel Junction Devices In article number 2300080, Jihyung Kim, Dahye Kim, Sungjun Kim, and colleagues demonstrate synaptic functions with a CMOS compatible HfAlOx-based ferroelectric tunnel junction (FTJ) device. Neuroinspired engineering based on an emerging memory is promising to overcome the limitations of von Neumann computing and conventional memories. The FTJ device is also used as a physical reservoir depending on its own properties in reservoir computing. This computing architecture is for processing sequential and temporal inputs based on the biological nervous system. Volume5, Issue8August 20232370036 RelatedInformation
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