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Sensitivity Analysis of I-Shape TFET Biosensor Considering Repulsive Steric and Trap Effects

2023; Institute of Electrical and Electronics Engineers; Volume: 22; Linguagem: Inglês

10.1109/tnano.2023.3309411

1941-0085

Shreyas Tiwari, Rajesh Saha,

Nanowire Synthesis and Applications

In this work, a dielectric modulated (DM) I-shape Tunnel FET based label-free biosensor has been explored on considering both the repulsive steric effect (RSE) and trap effect in the TCAD simulator. The gate oxide layer is aligned over the N+ pocket on both side source regions to enhance the tunneling rate. Moreover, the impact of trap impurities and steric effects are reported by extracting the drain current (I D ), energy band diagram, surface potential (ѱ), current ratio, and drain current sensitivity (SION) for the variation in length of cavity (L C ), thickness of cavity (T C ), and supply voltage (V DS ). Furthermore, the noise assessment parameter has been explored on considering of same non-idealistic effects. It is seen that on considering RSE and trap impurities, the streptavidin biomolecules report an error in sensitivity (60.1%) NoTrap and (108.6%) Trap .