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Annealing Temperature Effect on the Physical Properties of NiO Thin Films Grown by DC Magnetron Sputtering (Adv. Mater. Interfaces 9/2024)

2024; Wiley; Volume: 11; Issue: 9 Linguagem: Inglês

10.1002/admi.202470026

2196-7350

S. N. Timoshnev, A Kazakin, K. Yu. Shubina, В. Д. Андреева, Elizaveta Fedorenko, Aleksandra V. Koroleva, Evgeniy V. Zhizhin, Olga Yu. Koval, Alina Kurinnaya, Alexander S. Shalin, Vjačeslavs Bobrovs, Yakov Enns,

Transition Metal Oxide Nanomaterials

Advanced Materials InterfacesVolume 11, Issue 9 2470026 Back CoverOpen Access Annealing Temperature Effect on the Physical Properties of NiO Thin Films Grown by DC Magnetron Sputtering (Adv. Mater. Interfaces 9/2024) Sergei Timoshnev, Sergei Timoshnev Alferov University, Saint-Petersburg, 194021 Russia Ioffe Institute, Saint-Petersburg, 194021 RussiaSearch for more papers by this authorAlexey Kazakin, Alexey Kazakin Alferov University, Saint-Petersburg, 194021 RussiaSearch for more papers by this authorKsenia Shubina, Ksenia Shubina Alferov University, Saint-Petersburg, 194021 RussiaSearch for more papers by this authorValentina Andreeva, Valentina Andreeva Peter the Great St.Petersburg Polytechnic University, Saint-Petersburg, 195251 RussiaSearch for more papers by this authorElizaveta Fedorenko, Elizaveta Fedorenko Peter the Great St.Petersburg Polytechnic University, Saint-Petersburg, 195251 RussiaSearch for more papers by this authorAleksandra Koroleva, Aleksandra Koroleva Research Park, Saint Petersburg State University, Saint Petersburg, 199034 RussiaSearch for more papers by this authorEvgeniy Zhizhin, Evgeniy Zhizhin Research Park, Saint Petersburg State University, Saint Petersburg, 199034 RussiaSearch for more papers by this authorOlga Koval, Olga Koval Alferov University, Saint-Petersburg, 194021 RussiaSearch for more papers by this authorAlina Kurinnaya, Alina Kurinnaya Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, 141700 RussiaSearch for more papers by this authorAlexander Shalin, Alexander Shalin Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, 141700 Russia Faculty of Physics, Moscow State University, Moscow, 119991 RussiaSearch for more papers by this authorVjaceslavs Bobrovs, Vjaceslavs Bobrovs Institute of Telecommunications, Riga Technical University, Riga, 1048 LatviaSearch for more papers by this authorYakov Enns, Yakov Enns Alferov University, Saint-Petersburg, 194021 RussiaSearch for more papers by this author Sergei Timoshnev, Sergei Timoshnev Alferov University, Saint-Petersburg, 194021 Russia Ioffe Institute, Saint-Petersburg, 194021 RussiaSearch for more papers by this authorAlexey Kazakin, Alexey Kazakin Alferov University, Saint-Petersburg, 194021 RussiaSearch for more papers by this authorKsenia Shubina, Ksenia Shubina Alferov University, Saint-Petersburg, 194021 RussiaSearch for more papers by this authorValentina Andreeva, Valentina Andreeva Peter the Great St.Petersburg Polytechnic University, Saint-Petersburg, 195251 RussiaSearch for more papers by this authorElizaveta Fedorenko, Elizaveta Fedorenko Peter the Great St.Petersburg Polytechnic University, Saint-Petersburg, 195251 RussiaSearch for more papers by this authorAleksandra Koroleva, Aleksandra Koroleva Research Park, Saint Petersburg State University, Saint Petersburg, 199034 RussiaSearch for more papers by this authorEvgeniy Zhizhin, Evgeniy Zhizhin Research Park, Saint Petersburg State University, Saint Petersburg, 199034 RussiaSearch for more papers by this authorOlga Koval, Olga Koval Alferov University, Saint-Petersburg, 194021 RussiaSearch for more papers by this authorAlina Kurinnaya, Alina Kurinnaya Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, 141700 RussiaSearch for more papers by this authorAlexander Shalin, Alexander Shalin Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, 141700 Russia Faculty of Physics, Moscow State University, Moscow, 119991 RussiaSearch for more papers by this authorVjaceslavs Bobrovs, Vjaceslavs Bobrovs Institute of Telecommunications, Riga Technical University, Riga, 1048 LatviaSearch for more papers by this authorYakov Enns, Yakov Enns Alferov University, Saint-Petersburg, 194021 RussiaSearch for more papers by this author First published: 22 March 2024 https://doi.org/10.1002/admi.202470026AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Graphical Abstract Nickel Oxide Thin Films In article 2300815, Yakov Enns and co-workers produce thin films of nickel oxide (NiO) by magnetron sputtering. The modification of the properties of NiO films by annealing at various temperatures and environments is reported. The difference in the effect of film annealing depending on the modes of their initial growth is shown. Volume11, Issue9March 22, 20242470026 RelatedInformation